BiCMOS technology improvements for microwave application

Author

Van Noort, Wibo D. ; Rodriguez, A. ; Sun, HongJiang ; Zaato, Francis ; Zhang, Nancy ; Nesheiwat, Tony ; Neuilly, Francois ; Melai, Joost ; Hijzen, Erwin

Author_Institution

NXP Semicond., Hopewell Junction, NY

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

93

Lastpage

96

Abstract

The third generation of NXP 0.25 mum SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has f_T/f_max of 216/177 GHz and BV_cb0 of 5.2 V. The high-voltage NPN has 12 V BV_cb0, and f_T/f_max of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of -60 dB at 10 GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIM devices; capacitors; microwave integrated circuits; BiCMOS technology improvements; QUBiC4Xi; SiGe; frequency 1 THz; frequency 10 GHz; high-voltage NPN; improved MIM capacitor; microwave application; size 0.25 mum; voltage 12 V; voltage 5.2 V; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; MIM capacitors; Microwave technology; Millimeter wave technology; Scalability; Silicon germanium; Space technology; Substrates; BiCMOS; HBT; MIM capacitor; Si; SiGe; SiGe:C; TaO5; bipolar; heterojunction bipolar transistor; substrate isolation;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE

Conference_Location

Monteray, CA

ISSN

1088-9299

Print_ISBN

978-1-4244-2725-3

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2008.4662720

Filename

4662720