Title :
BiCMOS technology improvements for microwave application
Author :
Van Noort, Wibo D. ; Rodriguez, A. ; Sun, HongJiang ; Zaato, Francis ; Zhang, Nancy ; Nesheiwat, Tony ; Neuilly, Francois ; Melai, Joost ; Hijzen, Erwin
Author_Institution :
NXP Semicond., Hopewell Junction, NY
Abstract :
The third generation of NXP 0.25 mum SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of -60 dB at 10 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIM devices; capacitors; microwave integrated circuits; BiCMOS technology improvements; QUBiC4Xi; SiGe; frequency 1 THz; frequency 10 GHz; high-voltage NPN; improved MIM capacitor; microwave application; size 0.25 mum; voltage 12 V; voltage 5.2 V; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; MIM capacitors; Microwave technology; Millimeter wave technology; Scalability; Silicon germanium; Space technology; Substrates; BiCMOS; HBT; MIM capacitor; Si; SiGe; SiGe:C; TaO5; bipolar; heterojunction bipolar transistor; substrate isolation;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662720
