Z-pinch discrarge based EUV radiation source driven by a low inductance gap-less circuit

Author

Katsuki, Sumo ; Kimura, Akihiro ; Akiyoshi, Shinichi ; Fukumoto, Haruhiko ; Horita, Hiroyuki ; Namihira, Takao ; Akiyama, Hidenori

Author_Institution

Dept. of Electr. & Comput. Eng., Kumamoto Univ.

fYear

2004

fDate

23-26 May 2004

Firstpage

322

Lastpage

325

Abstract

This paper describes the characteristics of the EUV light source based on z-pinch discharges, which is driven by a low inductance pulsed current generator. The driving circuit with an inductance of 30 nH is capable of delivering the current of 34 kA in 110 ns to the z-pinch load. The z-pinch xenon plasmas are produced in the ceramic tube with the dimension of 3 or 5 mm in diameter and 5 mm in length. According to plasma dynamics observed by a fast framing camera, there are two radiation modes, one is dynamic and the other is quasistatic. Plasma behaves more dynamically with larger diameter discharge tube. The EUV emission from the z-pinch plasma was characterized with respect to spectrum and in-band EUV energy (13.5 nm, 2% bandwidth) as well as temporal behavior of the emission. Presently the maximum in-band EUV energy is 11 mJ/sr in the direction of 15 degree off-axis

Keywords

Z pinch; discharges (electric); inductance; plasma sources; pulse generators; ultraviolet sources; xenon; 110 ns; 3 mm; 34 kA; 5 mm; EUV radiation source; Z-pinch discharge; dynamic radiation mode; low inductance gap-less circuit; plasma dynamics; pulsed current generator; quasistatic radiation mode; z-pinch xenon plasmas; Ceramics; Character generation; Circuits; Fault location; Inductance; Light sources; Plasma properties; Plasma sources; Pulse generation; Xenon;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 2004 and 2004 High-Voltage Workshop. Conference Record of the Twenty-Sixth International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-8586-1

Type

conf

DOI

10.1109/MODSYM.2004.1433576

Filename

1433576