High conversion gain broadband frequency doubler design

Author

Tang, Wen ; Tang, Song ; He, Qiuyang ; Shao, Zhen-Hai

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

fDate

8-11 May 2010

Firstpage

536

Lastpage

538

Abstract

This paper focuses on the design of frequency doublers operating in the RF and microwave frequency ranges. To reject the fundamental and third harmonic signal over a broadband frequency range, an active balun was employed in the broadband frequency doubler which has resulted in fundamental signal and third harmonics signal rejection better than 12 dB from 12 to 30 GHz input frequency. More than 9.5dBm output power was achieved over the 24-60GHz doubled frequency band for 2dBm input power. The circuit was designed with a 0.15um gate-length InGaAs based on Pseudomorphic High Electron Mobility Transistor (pHEMT) Microwave and Millimeter IC (MMlC) technology.

Keywords

MMIC; baluns; frequency multipliers; gallium arsenide; indium compounds; power HEMT; InGaAs; MMlC technology; RF frequency range; active balun; broadband frequency range; circuit design; frequency 12 GHz to 30 GHz; high conversion gain broadband frequency doubler design; microwave frequency range; pHEMT microwave and millimeter IC; pseudomorphic high electron mobility transistor; size 0.15 mum; third harmonics signal rejection; Circuits; Electron mobility; Frequency conversion; HEMTs; Impedance matching; Indium gallium arsenide; Microwave frequencies; PHEMTs; Power generation; Radio frequency; balun; broadband; doublers; power amplifier; pseudomorphic high electron mobility transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5525217

Filename

5525217