Title :
A 19GHz DRO downconverter MMIC for 77GHz automotive radar frontends in a SiGe bipolar production technology
Author :
Forstner, H.P. ; Wohlmuth, H.D. ; Knapp, H. ; Gamsjäger, C. ; Böck, J. ; Meister, T. ; Aufinger, K.
Author_Institution :
Infineon Technol. AG, Automotive Ind. & Multimarket, Neubiberg
Abstract :
A dielectric resonator oscillator (DRO) based 19 GHz downconverter is presented, which has been integrated in a 200 GHz fT SiGe production technology. The circuits, a negative resistance block and a mixer, have been designed differentially. The DRO is optimized for low phase noise and operates at typically 18 GHz. The mixer converts the by-4-devided signal of a 77 GHz fundamental oscillator to around 1 GHz. Mixer conversion gain is on the order of ntilde 16 dB and the input referred 1 dB compression point is about 0 dBm. Phase Noise of the DRO is ntilde115 dBc/Hz at an offset frequency of 100 kHz. The power dissipation of the complete MMIC is 94 mW, operating off a supply voltage of +5.5 V.
Keywords :
Ge-Si alloys; MMIC mixers; MMIC oscillators; convertors; dielectric resonator oscillators; phase noise; road vehicle radar; semiconductor materials; DRO downconverter MMIC; SiGe; automotive radar frontend; bipolar production technology; dielectric resonator oscillator; frequency 100 kHz; frequency 18 GHz; frequency 19 GHz; frequency 200 GHz; frequency 77 GHz; gain 16 dB; low phase noise; mixer; mixer conversion gain; negative resistance block; offset frequency; power 94 mW; power dissipation; voltage 5.5 V; Automotive engineering; Dielectrics; Germanium silicon alloys; Integrated circuit technology; MMICs; Optimized production technology; Oscillators; Phase noise; Radar; Silicon germanium; ó Downconverter; 77GHz; ACC; Automotive Radar; DRO; FMCW; Low Noise; Mixer; SiGe;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662726
