Title :
Efficiency of junction termination techniques vs. oxide trapped charges
Author :
Mingues, C. ; Charitat, G.
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Abstract :
Numerous techniques have been used to improve the voltage handling capability of high voltage and power devices with the aim of obtaining ideal breakdown of a plane junction. Oxide and interface trapped charges, which could be generated during the technological fabrication process itself or by ionizing radiations, have a strong influence on the voltage handling capability of high voltage discrete switches as well as on High Voltage Integrated Circuits, HVIC´s. The aim of this research is to quantitatively investigate, both by numerical simulations and experiment, the evolution of the voltage handling capability versus oxide charges for different junction termination techniques, namely the Biased Ring, the SIPOS, the spiral SIPOS and Junction Termination Extension
Keywords :
X-ray effects; electric breakdown; interface states; power semiconductor diodes; semiconductor device models; surface charging; P+-N diodes; SIPOS; biased ring; high voltage devices; high voltage discrete switches; high voltage integrated circuits; ideal breakdown; interface trapped charges; ionizing radiations; junction termination extension; junction termination techniques; numerical simulation; oxide trapped charges; power devices; spiral SIPOS; voltage handling capability; Anodes; Breakdown voltage; Cathodes; Conductivity; Diodes; Electric resistance; Leakage current; Silicon; Spirals; Substrates;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601454
