SiGe HBTs featuring fT ≫400GHz at room temperature

Author

Geynet, B. ; Chevalier, P. ; Vandelle, B. ; Brossard, F. ; Zerounian, N. ; Buczko, M. ; Gloria, D. ; Aniel, F. ; Dambrine, G. ; Danneville, F. ; Dutartre, D. ; Chantre, A.

Author_Institution

STMicroelectronics, Crolles

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

121

Lastpage

124

Abstract

This paper presents the results of investigations on process thermal budget reduction in order to increase the operation frequency of SiGe HBTs. We describe the variations of DC and AC characteristics of the devices with the spike annealing temperature. Record peak f_T values of 410 GHz and 640 GHz are reported at room and cryogenic temperatures respectively.

Keywords

Ge-Si alloys; annealing; cryogenic electronics; heterojunction bipolar transistors; submillimetre wave transistors; HBT; cryogenic temperature; frequency 410 GHz; frequency 640 GHz; heterojunction bipolar transistor; process thermal budget reduction; spike annealing temperature; temperature 293 K to 298 K; Annealing; Boron; Cryogenics; Electric resistance; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Temperature; Heterojunction bipolar transistor (HBT); activation; cut-off frequency; diffusion; silicon-germanium (SiGe); terahertz; thermal budget;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE

Conference_Location

Monteray, CA

ISSN

1088-9299

Print_ISBN

978-1-4244-2725-3

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2008.4662727

Filename

4662727