Demonstration of a 270 GHz fT SiGe-C HBT within a manufacturing-proven 0.18μm BiCMOS process without the use of a raised extrinsic base

SiGe bipolar transistors with F_T of 270 GHz are integrated within a standard 0.18 mum CMOS process flow. These devices are built using the same architecture as Jazzpsila SBC18 SiGe BiCMOS process which has been in high-volume manufacturing for several years. The transistors have an F_MAX of 170 GHz but a path to achieving an F_MAX equal to F_T is demonstrated without the use of selective SiGe epitaxy or raised extrinsic base poly layers. Data is shown that suggests that the target of 270 GHz F_MAX can be achieved through a combination of modest design rule changes and optimization of extrinsic base doping conditions.