DocumentCode
3237284
Title
Experimental proof of current bifurcation and mutual heating in bipolar transistor arrays
Author
Vanhoucke, T. ; Kuindersma, P.I. ; Peters, W.C.M. ; Zieren, V. ; Donkers, J.J.T.M. ; Kramer, M. C J C M ; Hurkx, G.A.M.
Author_Institution
NXP-TSMC Res. Center, Leuven
fYear
2008
fDate
13-15 Oct. 2008
Firstpage
141
Lastpage
144
Abstract
We present experimental proof of the electro-thermal bifurcation and mutual heating in bipolar transistor arrays using photon emission microscopy. With this technique, no electrical probing of each individual transistor in the array is needed but optical measurements allow accurate determination of the electro-thermal effects. For identically processed transistors in an array, we show that current bifurcation and mutual heating can be observed as sequentially optical switching of each transistor. Such optical and electrical switching effect can be explained and described using the individual transistor critical collector current theory after including mutual heating.
Keywords
bifurcation; bipolar transistors; optical microscopy; optical switches; bipolar transistor arrays; critical corrector current theory; current bifurcation; electrical switching effect; electro-thermal bifurcation; mutual heating; optical switching; photon emission microscopy; Bifurcation; Bipolar transistors; Current distribution; Heating; Optical arrays; Optical microscopy; Photonic integrated circuits; Silicon; Stimulated emission; Voltage; Avalanche breakdown; Bipolar modeling and simulation; Current bifurcation; Electrothermal effects; Mutual heating; Photon emission microscopy; Power devices; Silicon bipolar/BiCMOS process technology; Stability criteria;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location
Monteray, CA
ISSN
1088-9299
Print_ISBN
978-1-4244-2725-3
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2008.4662732
Filename
4662732
Link To Document