DocumentCode
3237286
Title
High efficiency free running class F oscillator
Author
Prigent, Michel ; Camiade, R. ; Pataut, G. ; Reffet, D. ; Nebus, J.M. ; Obregon, J.
Author_Institution
IRCOM, Limoges Univ., France
fYear
1995
fDate
16-20 May 1995
Firstpage
1317
Abstract
A free running 1.6 GHz oscillator yielding 67% power efficiency with 24 dBm output power is proposed. It is based on the use of a transistor working in the an high efficiency class F associated to an appropriate feedback network. The transistor is a 2 mm gate periphery, 0.7 /spl mu/m gate length MESFET built by the Thomson foundry. The main impact of the characteristics of the constitutive components on the overall oscillator performance is also discussed.<>
Keywords
MESFET circuits; UHF oscillators; feedback oscillators; 0.7 micron; 1.6 GHz; 67 percent; MESFET; class F oscillator; feedback network; free running oscillator; high efficiency design; oscillator performance; transistor type; Feedback; Foundries; High power amplifiers; MESFETs; Mobile communication; Oscillators; Power amplifiers; Power generation; Satellite communication; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406213
Filename
406213
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