Title :
High efficiency free running class F oscillator
Author :
Prigent, Michel ; Camiade, R. ; Pataut, G. ; Reffet, D. ; Nebus, J.M. ; Obregon, J.
Author_Institution :
IRCOM, Limoges Univ., France
Abstract :
A free running 1.6 GHz oscillator yielding 67% power efficiency with 24 dBm output power is proposed. It is based on the use of a transistor working in the an high efficiency class F associated to an appropriate feedback network. The transistor is a 2 mm gate periphery, 0.7 /spl mu/m gate length MESFET built by the Thomson foundry. The main impact of the characteristics of the constitutive components on the overall oscillator performance is also discussed.<>
Keywords :
MESFET circuits; UHF oscillators; feedback oscillators; 0.7 micron; 1.6 GHz; 67 percent; MESFET; class F oscillator; feedback network; free running oscillator; high efficiency design; oscillator performance; transistor type; Feedback; Foundries; High power amplifiers; MESFETs; Mobile communication; Oscillators; Power amplifiers; Power generation; Satellite communication; Telephony;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406213
