Numerical study on the performance of GaAs MESFET-like oscillator

Author

Mohammadi, F.A. ; Raahemifar, K. ; Yuan, F.

Author_Institution

Dept. of Electr. & Comput. Eng., Ryerson Polytech. Univ., Toronto, Ont., Canada

Volume

2

fYear

2001

fDate

2001

Firstpage

897

Abstract

The principal operation of a monolithic microwave integrated circuits (MMIC) compatible GaAs field effect controlled transferred electron oscillators has been investigated through our new high frequency device simulator by means of a two dimensional full hydrodynamic model. It is shown that the device presents a dynamic negative resistance and it is capable of generating the high frequency power in the millimeter-wave band

Keywords

Gunn oscillators; III-V semiconductors; MMIC oscillators; circuit simulation; gallium arsenide; integrated circuit modelling; millimetre wave generation; negative resistance; 2D full hydrodynamic model; FECTED; GaAs; III V semiconductor; MESFET-like oscillator; MMIC; dynamic negative resistance; field effect controlled transferred electron oscillators; high frequency device simulator; high frequency power generation; millimeter-wave band; monolithic microwave integrated circuits; Electrons; Field effect MMICs; Frequency; Gallium arsenide; Integrated circuit modeling; MESFETs; Microwave devices; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2001. Canadian Conference on

Conference_Location

Toronto, Ont.

ISSN

0840-7789

Print_ISBN

0-7803-6715-4

Type

conf

DOI

10.1109/CCECE.2001.933560

Filename

933560