Title :
Unipolar and bipolar organic field-effect transistors
Author :
Dodabalapur, Ananth
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX
Abstract :
This paper describes the characteristics and performance levels of unipolar as well as bipolar organic field-effect transistors (FETs) and also the possible applications enabled by these performance levels. Unipolar FETs can be either p-channel or n-channel depending on the active semiconductor chosen as well as the nature of the semiconductor-insulator interface, and bipolar FETs can be used as light-emitting devices. Bipolar FETs can be designed with a single semiconductor or in configurations involving material mixtures, vertical and lateral heterostructures.
Keywords :
bipolar transistors; field effect transistors; organic semiconductors; bipolar field-effect transistors; n-channel; organic field-effect transistors; p-channel; semiconductor-insulator interface; unipolar field-effect transistors; Charge carrier processes; Circuits; Dielectrics; Electron traps; FETs; Liquid crystal displays; Liquid crystal polymers; OFETs; Semiconductor materials; Transistors; Bipolar; Organic; Transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662736
