Title :
A thermal design methodology for power SiGe HBTs with non-uniform emitter finger spacing
Author :
Jin, D.Y. ; Zhang, W.R. ; Guan, B.L. ; Chen, L. ; Hu, N. ; Xiao, Y. ; Wang, R.Q.
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
As an effective and feasible method, the technology of non-uniform emitter finger spacing has been used to alleviate the thermal effects and improve the uneven temperature profile in multi-finger power SiGe HBTs. However, for the HBT with dozens of emitter fingers, designing multiple finger spacing values becomes trivial and time-consuming. In the paper, a new thermal design methodology namely Grouping and Adjusting (GA) method is proposed to shorten design time of non-uniform spacing values. Taking a 30-finger HBT for example, the detailed design procedure of non-uniform spacing values is presented, which shows that the peak temperature is lowed by 8.3K, and the maximum temperature difference is improved by 23.5% when compared with the uniform one. Furthermore, three types of the formulas for designing the spacing values are proposed to meet the different requirement of the temperature profile.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; thermal analysis; SiGe; grouping and adjusting method; multifinger power SiGe HBT; nonuniform emitter finger spacing; nonuniform spacing value; thermal design methodology; thermal effect; Design methodology; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Phased arrays; Radar antennas; Silicon germanium; Space technology; Temperature; Thermal engineering;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5525230