Title :
60 GHz ultra low phase noise sige common base oscillator using a wirebond coupled mcm integrated micromachined cavity resonator
Author :
Ocket, I. ; Mills, J.B. ; John, A. ; Nauwelaers, B.
Author_Institution :
ESAT/Telemic, Katholieke Univ. Leuven, Heverlee
Abstract :
This paper reports on a 60 GHz common base fundamental oscillator with ultra low phase noise realized in QUBIC4Xpsilas HBT technology. It uses a silicon micromachined cavity resonator which is mounted on a common MCM PASSI3I carrier and coupled to the MMIC. A novel feed approach is presented which uses a wirebond to couple the interconnecting CPW line to the KOH-etched silicon cavity of which the advantages are ease of manufacture and reduced substrate effects compared to other coupling approaches. Oscillator measurement results for the stand-alone MMIC are presented and compared to 2.5D/3D simulations. The important effect of wirebond shape variability is quantified in terms of oscillation frequency, output power and phase noise.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microcavities; oscillators; phase noise; KOH-etched silicon cavity; QUBIC4X HBT technology; SiGe; frequency 60 GHz; oscillation frequency; oscillator measurement; output power; planar passive multichip module; stand-alone MMIC; ultra low phase noise common base oscillator; wirebond coupled MCM integrated micromachined cavity resonator; wirebond shape variability; Cavity resonators; Coplanar waveguides; Feeds; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Manufacturing; Oscillators; Phase noise; Silicon germanium; BiCMOS integrated circuits; cavity resonators; coplanar waveguide; micromachining; millimeter wave oscillators; monolithic microwave integrated circuit; multichip modules;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662739