DocumentCode
3237522
Title
GaN technologies and developments: Status and trends
Author
Buchta, M. ; Beilenhoff, K. ; Blanck, H. ; Thorpe, J. ; Behtash, R. ; Heckmann, S. ; Jung, H. ; Ouarch, Z. ; Camiade, M.
Author_Institution
United Monolithic Semicond. GmbH, Ulm, Germany
fYear
2010
fDate
8-11 May 2010
Firstpage
488
Lastpage
491
Abstract
Today the European GaN interest is slightly shifting away from academic research to development and industrialization of technology, devices and applications. The recent public funding was started to accelerate the transition from academica to industry on all levels like EC, national and by Space Agencies. In the paper the today´s running projects and the upcoming trends will be described.
Keywords
III-V semiconductors; gallium compounds; power semiconductor devices; Europe; GaN; academic research; gallium nitride development; gallium nitride technology; high-power RF devices; technology industrialization; Epitaxial growth; Europe; Gallium nitride; Lattices; Radio frequency; Robustness; Silicon carbide; Space technology; Substrates; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4244-5705-2
Type
conf
DOI
10.1109/ICMMT.2010.5525238
Filename
5525238
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