• DocumentCode
    3237528
  • Title

    High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies

  • Author

    He, Z.X. ; Daley, D. ; Bolam, R. ; Vanslette, D. ; Chen, F. ; Cooney, E. ; Mosher, D. ; Feilchenfeld, N. ; Newton, K. ; Eshun, E. ; Rassel, R. ; Benoit, J. ; Coolbaugh, D. ; St Onge, S. ; Dunn, J.

  • Author_Institution
    IBM Corp., Essex Junction, VT
  • fYear
    2008
  • fDate
    13-15 Oct. 2008
  • Firstpage
    212
  • Lastpage
    215
  • Abstract
    Two MIM capacitors with capacitance density of 11 and 0.48 fF/um2 were fabricated simultaneously using IBM-s 0.13 um SiGe 8 WL BiCMOS process. Results from DC parametric measurement indicate that these two capacitors compliment each other extremely well.
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; MIM devices; capacitors; radiofrequency integrated circuits; semiconductor materials; BiCMOS technologies; DC parametric measurement; SiGe; advanced RFCMOS; capacitance density; low density complimentary MIM capacitor; size 0.13 mum; BiCMOS integrated circuits; Capacitance; Copper; Costs; Dielectric films; Dielectric materials; Fabrication; MIM capacitors; Silicon; Voltage-controlled oscillators; Capacitor; Complimentary; HiK; High Voltage; MIM; RFCMOS; SiGe BiCMOS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
  • Conference_Location
    Monteray, CA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-2725-3
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2008.4662746
  • Filename
    4662746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3237528