• DocumentCode
    3237612
  • Title

    W-band inductive high order frequency multiplier based on silicon avalanche diode

  • Author

    Zhao, Minghua ; Fan, Yong ; He, Zongrui ; Lin, Xianqi ; Zhang, Bo

  • Author_Institution
    Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2010
  • fDate
    8-11 May 2010
  • Firstpage
    473
  • Lastpage
    475
  • Abstract
    An investigation of millimeter wave high order frequency multiplier based on the inductive nonlinearity of avalanche diode is presented. The operation of high order frequency multiplication is introduced and the high order harmonics generation character under external RF field modulation is analyzed. In experiment, the output power of 6.2 mW and 9.55 mW are obtained at output frequency of 94.05 GHz and 100.32 GHz with 15th and 16th multiplication order. The phase noise character is also according to the phase noise formula of frequency multiplier.
  • Keywords
    avalanche diodes; frequency multipliers; harmonic generation; millimetre wave diodes; phase noise; RF field modulation; W-band inductive high order frequency multiplier; frequency 100.32 GHz; frequency 94.05 GHz; high order harmonics generation; inductive nonlinearity; millimeter wave high order frequency multiplier; phase noise; power 6.2 mW; power 9.55 mW; silicon avalanche diode; Charge carrier processes; Diodes; Equations; Frequency conversion; Ionization; Millimeter wave technology; Phase noise; Power harmonic filters; Radio frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-5705-2
  • Type

    conf

  • DOI
    10.1109/ICMMT.2010.5525242
  • Filename
    5525242