DocumentCode
3237612
Title
W-band inductive high order frequency multiplier based on silicon avalanche diode
Author
Zhao, Minghua ; Fan, Yong ; He, Zongrui ; Lin, Xianqi ; Zhang, Bo
Author_Institution
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2010
fDate
8-11 May 2010
Firstpage
473
Lastpage
475
Abstract
An investigation of millimeter wave high order frequency multiplier based on the inductive nonlinearity of avalanche diode is presented. The operation of high order frequency multiplication is introduced and the high order harmonics generation character under external RF field modulation is analyzed. In experiment, the output power of 6.2 mW and 9.55 mW are obtained at output frequency of 94.05 GHz and 100.32 GHz with 15th and 16th multiplication order. The phase noise character is also according to the phase noise formula of frequency multiplier.
Keywords
avalanche diodes; frequency multipliers; harmonic generation; millimetre wave diodes; phase noise; RF field modulation; W-band inductive high order frequency multiplier; frequency 100.32 GHz; frequency 94.05 GHz; high order harmonics generation; inductive nonlinearity; millimeter wave high order frequency multiplier; phase noise; power 6.2 mW; power 9.55 mW; silicon avalanche diode; Charge carrier processes; Diodes; Equations; Frequency conversion; Ionization; Millimeter wave technology; Phase noise; Power harmonic filters; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4244-5705-2
Type
conf
DOI
10.1109/ICMMT.2010.5525242
Filename
5525242
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