DocumentCode :
3237614
Title :
From measurement to intrinsic device characteristics: Test structures and parasitic determination
Author :
Pourchon, F. ; Raya, C. ; Derrier, N. ; Chevalier, P. ; Gloria, D. ; Pruvost, S. ; Céli, D.
Author_Institution :
STMicroelectronics, Crolles
fYear :
2008
fDate :
13-15 Oct. 2008
Firstpage :
232
Lastpage :
239
Abstract :
mm-Wave applications claim for accurate and reliable device models for their very high frequency operation range. This is not possible without any representative measurement of the intrinsic device performances especially HF small-signal measurements. In this paper we determine major parasitic contributions of regular HF test structures. Parasitic investigation goes from the probes down to the transistor. Original dummies are described and HF/DC measurements are presented and analyzed. Based on this limited set of structures a scalable de-embedding approach is described. To account for DC/HF parasitics, a sub-circuit is proposed for modeling purpose.
Keywords :
frequency measurement; millimetre wave measurement; HF measurement; bipolar modeling; intrinsic device characteristics; mm-wave applications; parasitic determination; scalable de-embedding approach; test structures; BiCMOS integrated circuits; Calibration; Frequency measurement; Germanium silicon alloys; Impedance; Performance evaluation; Probes; Radio frequency; Silicon germanium; System testing; Bipolar modeling and simulation; Deembedding; HF measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
ISSN :
1088-9299
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2008.4662751
Filename :
4662751
Link To Document :
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