• DocumentCode
    3237644
  • Title

    Common-base intermodulation characteristics of advanced SiGe HBTs

  • Author

    Grens, Curtis M. ; Seth, Sachin ; Cressler, John D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
  • fYear
    2008
  • fDate
    13-15 Oct. 2008
  • Firstpage
    244
  • Lastpage
    247
  • Abstract
    Common-base (CB) linearity performance of insensitive to these various parameters. However, at high currents, these factors each play a significant role in determining overall CB linearity. We show that CB linearity performance of SiGe HBTs can be well-predicted by the standard VBIC model.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; SiGe; advanced HBTs; common-base intermodulation characteristics; standard VBIC model; CMOS technology; Circuits; Dynamic range; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Power generation; Radio frequency; Silicon germanium; Common-base (CB); SiGe HBT; dynamic range; intermodulation; linearity; third-order intercept (IP3);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
  • Conference_Location
    Monteray, CA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-2725-3
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2008.4662753
  • Filename
    4662753
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3237644