Title :
Common-base intermodulation characteristics of advanced SiGe HBTs
Author :
Grens, Curtis M. ; Seth, Sachin ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
Common-base (CB) linearity performance of insensitive to these various parameters. However, at high currents, these factors each play a significant role in determining overall CB linearity. We show that CB linearity performance of SiGe HBTs can be well-predicted by the standard VBIC model.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; SiGe; advanced HBTs; common-base intermodulation characteristics; standard VBIC model; CMOS technology; Circuits; Dynamic range; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Power generation; Radio frequency; Silicon germanium; Common-base (CB); SiGe HBT; dynamic range; intermodulation; linearity; third-order intercept (IP3);
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662753
