DocumentCode :
3237666
Title :
Analysis of the effects of parasitic capacitance and inductance on inverse class E power amplifier
Author :
You, Fei ; He, Songbai
Author_Institution :
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2010
fDate :
8-11 May 2010
Firstpage :
456
Lastpage :
459
Abstract :
In this paper, an analysis is performed to determine the effects of the power transistor´s parasitic capacitance and inductance on the performance of inverse Class E power amplifiers. The theoretical analysis shows that the inverse Class E power amplifier´s performance does not monotonically vary with the increasing parasitic output capacitance. Numerical results are given to show the variations of output signal´s magnitude and phase, drain efficiency, and other parameters about the non-optimum switching conditions. After that, the equation to determine the maximum frequency of the inverse Class E power amplifier is also proposed.
Keywords :
capacitance; inductance; power amplifiers; inductance; inverse Class E power amplifier; nonoptimum switching conditions; parasitic capacitance; power transistor; Analytical models; Equations; Frequency; Helium; Inductance; Parasitic capacitance; Performance analysis; Power amplifiers; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
Type :
conf
DOI :
10.1109/ICMMT.2010.5525245
Filename :
5525245
Link To Document :
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