• DocumentCode
    3237666
  • Title

    Analysis of the effects of parasitic capacitance and inductance on inverse class E power amplifier

  • Author

    You, Fei ; He, Songbai

  • Author_Institution
    Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2010
  • fDate
    8-11 May 2010
  • Firstpage
    456
  • Lastpage
    459
  • Abstract
    In this paper, an analysis is performed to determine the effects of the power transistor´s parasitic capacitance and inductance on the performance of inverse Class E power amplifiers. The theoretical analysis shows that the inverse Class E power amplifier´s performance does not monotonically vary with the increasing parasitic output capacitance. Numerical results are given to show the variations of output signal´s magnitude and phase, drain efficiency, and other parameters about the non-optimum switching conditions. After that, the equation to determine the maximum frequency of the inverse Class E power amplifier is also proposed.
  • Keywords
    capacitance; inductance; power amplifiers; inductance; inverse Class E power amplifier; nonoptimum switching conditions; parasitic capacitance; power transistor; Analytical models; Equations; Frequency; Helium; Inductance; Parasitic capacitance; Performance analysis; Power amplifiers; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-5705-2
  • Type

    conf

  • DOI
    10.1109/ICMMT.2010.5525245
  • Filename
    5525245