Title :
Large signal SiGe HBT model validation for 77GHz large signal applications
Author :
Shams, S. ; Majerus, M. ; Tutt, M. ; Lim, I. ; Zlotnicka, A.
Author_Institution :
Technol. Design Access, Freescale Semicond. Inc., Tempe, AZ
Abstract :
The need for large signal model verification for millimeter-wave (mmW) applications is explained. A system for collecting large signal data at mmW frequencies is described. Example results of measured and modeled data are compared illustrating the capability of a SiGe HBT model.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave power amplifiers; millimetre wave transistors; HBT model validation; SiGe; frequency 77 GHz; large signal applications; millimeter-wave applications; Bipolar transistors; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave measurements; Power amplifiers; Power measurement; Power system modeling; Semiconductor device modeling; Silicon germanium; Bipolar transistors; microwave measurements; microwave power amplifiers; microwave power bipolar transistor amplifiers; microwave power bipolar transistors; modeling; power amplifiers; power bipolar transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662754
