DocumentCode
3237667
Title
Large signal SiGe HBT model validation for 77GHz large signal applications
Author
Shams, S. ; Majerus, M. ; Tutt, M. ; Lim, I. ; Zlotnicka, A.
Author_Institution
Technol. Design Access, Freescale Semicond. Inc., Tempe, AZ
fYear
2008
fDate
13-15 Oct. 2008
Firstpage
248
Lastpage
251
Abstract
The need for large signal model verification for millimeter-wave (mmW) applications is explained. A system for collecting large signal data at mmW frequencies is described. Example results of measured and modeled data are compared illustrating the capability of a SiGe HBT model.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; microwave power amplifiers; millimetre wave transistors; HBT model validation; SiGe; frequency 77 GHz; large signal applications; millimeter-wave applications; Bipolar transistors; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave measurements; Power amplifiers; Power measurement; Power system modeling; Semiconductor device modeling; Silicon germanium; Bipolar transistors; microwave measurements; microwave power amplifiers; microwave power bipolar transistor amplifiers; microwave power bipolar transistors; modeling; power amplifiers; power bipolar transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location
Monteray, CA
ISSN
1088-9299
Print_ISBN
978-1-4244-2725-3
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2008.4662754
Filename
4662754
Link To Document