Title :
A 35 GS/s 5-Bit SiGe BiCMOS flash ADC with offset corrected exclusive-or comparator
Author :
Kertis, R.A. ; Humble, J.S. ; Daun-Lindberg, M.A. ; Philpott, R.A. ; Fritz, K.A. ; Schwab, D.J. ; Prairie, J.F. ; Gilbert, B.K. ; Daniel, E.S.
Author_Institution :
Special Purpose Processor Dev. Group, Mayo Clinic, Rochester, MN
Abstract :
The design and wafer probe test results of a 5-bit SiGe ADC are presented. The integrated circuit, fabricated in a 200/250 GHz fT/Fmax, SiGe BiCMOS technology, provides a 5-bit analog to digital conversion with input tone frequencies up to 20 GHz and sampling clock rates up to 35 GS/s. The ADC makes use of a comparator with an integrated exclusive-or function to reduce power consumption. The device also generates two half-rate interleaved outputs to ease in data capturing with laboratory equipment. An effective number of bits (ENOB) of nearly 5.0 is achieved for low frequency input tones, dropping to 4.0 at 10 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; analogue-digital conversion; high-speed integrated circuits; power consumption; semiconductor materials; 5-bit analog-to-digital conversion; BiCMOS flash ADC; SiGe; frequency 10 GHz; frequency 20 GHz; frequency 200 GHz; frequency 250 GHz; input tone frequency; power consumption; speed sampling capability; Analog integrated circuits; Analog-digital conversion; BiCMOS integrated circuits; Circuit testing; Digital integrated circuits; Frequency conversion; Germanium silicon alloys; Integrated circuit technology; Probes; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662755