Title :
A 3-Bit 2.2V 3.08pJ/conversion-step 11GS/s flash ADC in a 0.12μm SiGe BiCMOS technology
Author :
Yao, Yuan ; Dai, Foster ; Irwin, J. David ; Jaeger, Richard C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL
Abstract :
A 3-bit ADC for X-band applications that can work at a sampling rate of 11 GS/s is presented in this paper. Current comparators are used to achieve the high sampling rate of 11 GHz at X-band. A 3-bit current-steering DAC is also designed for testing the high-speed ADC. The ADC-DAC RFIC is implemented in a 0.12 mum SiGe technology and occupies a core area of 1.0 x 0.8 mm2. The ADC can operate with a FOM of 3.08 pJ/conversion-step, consuming 0.22 W power with a 2.2 V power supply. It demonstrates a good performance at X-band sampling rate with the lowest power supply voltage, lowest power consumption, smallest core area and best FOM reported so far. The ADC-DAC RFIC is tested in a 44-pin CLLC package and achieves a peak SFDR of 28 dBc and a peak ENOB of 2.7 bits at 11 GS/s sampling rate.
Keywords :
BiCMOS integrated circuits; analogue-digital conversion; high-speed integrated circuits; radiofrequency integrated circuits; ADC-DAC RFIC; BiCMOS technology; SiGe; X-band applications; X-band sampling rate; conversion-step flash ADC; core area; current-steering DAC; high sampling rate; high-speed ADC; power supply; sampling rate; size 0.12 mum; voltage 2.2 V; BiCMOS integrated circuits; Energy consumption; Germanium silicon alloys; Packaging; Power supplies; Radiofrequency integrated circuits; Sampling methods; Silicon germanium; Testing; Voltage; BiCMOS; SiGe; X-band; analog-to-digital converter (ADC); current comparator; digital-to-analog converter (DAC); flash; low power; low voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662756
