Sacrificial oxidation techniques of top Si layer to reduce source-to-drain leakage current in 0.25-μm MOSFETs/SIMOX

Summary form only given. CMOS/SIMOX technology is promising for future low-power and high-speed ULSIs, and the advantages of 0.25 μm CMOS/SIMOX LSIs have already been demonstrated. As the channel length becomes smaller and the number of MOSFETs in LSIs increases, the unexpected flow of a large source-to-drain (S/D) leakage current is often a problem. It is important that this current be reduced for LSI applications. This paper shows that the OSFs (Oxidation-induced Stacking Faults) in the top Si that are generated during sacrificial thermal oxidation greatly increase S/D leakage current. Methods to reduce this leakage current are proposed