Planar terminations in 4H-SiC Schottky diodes with low leakage and high yields

Various planar termination techniques were analyzed that extend the maximum blocking voltage in SIC devices while giving low leakage currents and high yields. Among various techniques analyzed, it was found that: guard ring termination is more effective than unterminated; field plate termination is more effective than guard ring termination; and field plate, double implanted field rings, single and double trench rings are similar in their effectiveness in the 500-800 V range. Single implanted field rings gave the highest average breakdown voltage as well as the highest voltage (805 V) device. While the yield among all devices was 22%, the yield among the ones with only a single implanted floating field ring was 67%