Novel design topology for ultra low power down converters with broadband on chip matching network

Author

Schmatz, Martin L.

Author_Institution

Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

1995

fDate

16-20 May 1995

Firstpage

1329

Abstract

A novel design topology for ultra low power receivers and down converters has been developed. Using this topology, a monolithic L-band down converter consisting of an input amplifier and a double balanced mixer has been implemented with a standard 0.7 /spl mu/m GaAs MESFET process. The circuit has a single ended 50 /spl Omega/ input and differential outputs offering totally more than 40 dB voltage conversion gain at 1 GHz and 30 dB at 2 GHz. It is supplied by a single lithium cell and has a DC power consumption of less than 2.0 mW at 2.7 V/sub DC/.<>

Keywords

MESFET integrated circuits; MMIC mixers; UHF frequency convertors; UHF integrated circuits; UHF mixers; field effect MMIC; impedance matching; radio receivers; 0.7 micron; 1 to 2 GHz; 2 mW; 2.7 V; 30 to 40 dB; GaAs; GaAs MESFET process; UHF receivers; broadband onchip matching network; design topology; differential outputs; double balanced mixer; input amplifier; monolithic L-band downconverter; single Li cell supply; ultra low power down converters; Capacitors; Circuit topology; Energy consumption; Gain; Impedance; Network topology; Network-on-a-chip; Noise figure; Preamplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406216

Filename

406216