DocumentCode
3238152
Title
Optically activated charge domain model for high-gain GaAs photoconductive switches
Author
Liang, Zhen-xian ; Shi, Wei ; Feng, Jun ; Xu, Chuan-xiang
Author_Institution
Inst. of Electr. Insulation, Xi´´an Jiaotong Univ., China
Volume
2
fYear
1996
fDate
20-23 Oct 1996
Firstpage
726
Abstract
A model for theoretical analysis of nonlinear (or high gain) mode of photoconductive semiconductor switches (PCSS´s) has been proposed. The switching transition of high-gain PCSS´s can be described with an optically activated luminous charge domain. The formation and radiation transit, accumulation of the charge domain are related with the triggering and sustaining phrases of PCSS´s, respectively
Keywords
III-V semiconductors; gallium arsenide; photoconducting switches; semiconductor device models; GaAs; nonlinear high-gain mode; optically activated luminous charge domain model; photoconductive semiconductor switch; switching transition; Cathodes; Gallium arsenide; High speed optical techniques; Nonlinear optical devices; Nonlinear optics; Optical pulses; Optical switches; Photoconducting devices; Photoconductivity; Pulse power systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena, 1996., IEEE 1996 Annual Report of the Conference on
Conference_Location
Millbrae, CA
Print_ISBN
0-7803-3580-5
Type
conf
DOI
10.1109/CEIDP.1996.564584
Filename
564584
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