Power generation of millimeter-wave diamond IMPATT diodes

The results of a large-signal simulation of diamond IMPATT (impact avalanche and transit time) diodes are presented. The purpose of this investigation is to determine the potential of diamond IMPATTs as millimeter-wave power generators. This computer simulation is used to compare the performance of diamond IMPATTs with that of similar Si, GaAs, and InP devices. In addition, diamond IMPATT output power and power conversion efficiency are compared with experimental results on Si, GaAs and InP IMPATT and Gunn diodes. Thermal effects on the RF performance are investigated by means of an area-current-density plane analysis. The results indicate that diamond IMPATTs could produce power conversion efficiencies comparable to those of Si and GaAs. Due to their higher operating voltages and thermal conductivity, diamond IMPATTs could produce output power much greater than that of the other materials at frequencies below 100 GHz. At higher frequencies, diamond IMPATT performance is limited by its electrical properties and produces powers comparable to those of Si devices