Temperature dependent functional small-signal and noise model of GaAs FET

Author

Nosal, Z.

Author_Institution

Warsaw Univ. of Technol., Poland

fYear

1995

fDate

16-20 May 1995

Firstpage

1339

Abstract

A new CAD oriented noise model of the GaAs small signal FET is proposed. It introduces only one parameter to describe noise properties of the MESFET, contrary to previous models, which used more numbers. Model components are bias and temperature dependent. Temperature dependence of parameters is modelled by a numerical approximation to the physical behavior of carrier mobility and carrier saturation velocity in GaAs. Comparison with measured and published transistor parameters is presented.<>

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; carrier mobility; equivalent circuits; gallium arsenide; microwave field effect transistors; semiconductor device models; semiconductor device noise; CAD oriented noise model; GaAs; MESFET; bias dependence; carrier mobility; carrier saturation velocity; noise properties; numerical approximation; small signal FET; temperature dependent model; transistor parameters; Gallium arsenide; Microwave FETs; Microwave devices; Microwave measurements; Microwave transistors; Numerical models; Packaging; Predictive models; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406218

Filename

406218