Title :
Improvement of RSF for a statistical design of lithographic process
Author :
Goda, A. ; Misaka, A. ; Umimoto, H. ; Odanaka, S.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Japan
Abstract :
A statistical design method for lithographic process using the RSM (Response Surface Method) is developed. The RSF for CD (Critical Dimension) in optical lithography is constructed by the 4th order polynomial with coefficients described as a function of the gap. The accuracy of RSF for CD in the lithography is discussed
Keywords :
photolithography; polynomials; proximity effect (lithography); statistical analysis; 4th order polynomial; critical dimension; lithographic process; response surface method; statistical design method; Design methodology; Least squares methods; Lithography; Optical sensors; Optical surface waves; Polynomials; Process design; Proximity effect; Resists; Space technology;
Conference_Titel :
Statistical Metrology, 1997 2nd International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-3737-9
DOI :
10.1109/IWSTM.1997.629417
