DocumentCode
3238616
Title
Successful modeling of a semiconductor R&D facility
Author
Tullis, Barclay ; Mehrotra, Vijay ; Zuanich, Dick
Author_Institution
Hewlett Packard Co., Palo Alto, CA, USA
fYear
1990
fDate
21-23 May 1990
Firstpage
26
Lastpage
32
Abstract
A chief limitation on process development cycle time is the time it takes to process wafers. Hewlett Packard Co. has shortened this time by using discrete-event simulation of its R&D fabrication facility to better understand its capacity limitations and to analyze how changes affect the cycle times of complete wafer processing. Results include Pareto charts of equipment according to the impacts that changes in their mean-time-between-failure (MTBF) and/or mean-time-to-repair (MTTR) parameters have on wafer cycle times. Results also include a Pareto chart of operator skills and their impact on cycle times; that is, one can know how much effect there is on cycle times when staffing is changed to satisfy needs for a specific operator skill. Similarly, it is possible to evaluate effects of shift schedules and end-of-shift wafer processing decisions. Furthermore, simulation reveals the relative benefits of applying different dispatching rules (such as first in, first out, shortest-processing time, least-work-in-next queue, etc.) and of different inventory-level control policies
Keywords
integrated circuit manufacture; production control; research and development management; Hewlett Packard; MTBF; MTTR; Pareto chart of operator skills; Pareto charts of equipment; R&D fabrication facility; capacity limitations; cycle times of complete wafer processing; discrete-event simulation; dispatching rules; effects of shift schedules; end-of-shift wafer processing decisions; first in, first out; inventory-level control policies; least-work-in-next queue; limitation on process development cycle time; mean-time-between-failure; mean-time-to-repair; modeling; processing simulation; semiconductor R&D facility; shortest-processing time; staffing changes effects; time to process wafers; wafer cycle times; CMOS technology; Computational modeling; Computer languages; Computer simulation; Consumer electronics; Discrete event simulation; Fabrication; Integrated circuit technology; Research and development; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Science Symposium, 1990. ISMSS 1990., IEEE/SEMI International
Conference_Location
Burlingame, CA
Type
conf
DOI
10.1109/ISMSS.1990.66131
Filename
66131
Link To Document