Effect of annealing sequences on the structure of buried oxide layer in low-dose SIMOX

Author

Sudou, M. ; Kainuma, M. ; Arai, K. ; Takamatsu, M. ; Nakai, T. ; Shingyouji, T. ; Cordts, B.

Author_Institution

Mitsubishi Metal Corp., Saitama, Japan

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

156

Lastpage

157

Abstract

SIMOX wafers with a dose of ~4E17 cm^-2 (low-dose) have been studied because of the high production throughput and low threading dislocation density in the top Si layer compared with high-dose wafers. A relatively new technique for making the SIMOX structure has been developed by using low-dose ion implantation and subsequent high temperature annealing. However, the details of the physical process are still unclear. In this paper, we report on the mechanism of the buried oxide (BOX) formation in low-dose SIMOX by studying the effect of the ramping rate and annealing time on the structure

Keywords

SIMOX; annealing; atomic force microscopy; buried layers; ion implantation; oxidation; precipitation; surface structure; transmission electron microscopy; 1390 C; AFM; BOX formation; SIMOX wafers; Si-SiO₂; Si:O; XTEM; annealing sequences; annealing time; buried oxide layer structure; high temperature annealing; low threading dislocation density; low-dose SIMOX; low-dose ion implantation; oxide precipitates; production throughput; ramping rate; surface morphology; trapezoidal hillocks; Annealing; Production; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552541

Filename

552541