Title :
Effect of annealing sequences on the structure of buried oxide layer in low-dose SIMOX
Author :
Sudou, M. ; Kainuma, M. ; Arai, K. ; Takamatsu, M. ; Nakai, T. ; Shingyouji, T. ; Cordts, B.
Author_Institution :
Mitsubishi Metal Corp., Saitama, Japan
fDate :
30 Sep-3 Oct 1996
Abstract :
SIMOX wafers with a dose of ~4E17 cm-2 (low-dose) have been studied because of the high production throughput and low threading dislocation density in the top Si layer compared with high-dose wafers. A relatively new technique for making the SIMOX structure has been developed by using low-dose ion implantation and subsequent high temperature annealing. However, the details of the physical process are still unclear. In this paper, we report on the mechanism of the buried oxide (BOX) formation in low-dose SIMOX by studying the effect of the ramping rate and annealing time on the structure
Keywords :
SIMOX; annealing; atomic force microscopy; buried layers; ion implantation; oxidation; precipitation; surface structure; transmission electron microscopy; 1390 C; AFM; BOX formation; SIMOX wafers; Si-SiO2; Si:O; XTEM; annealing sequences; annealing time; buried oxide layer structure; high temperature annealing; low threading dislocation density; low-dose SIMOX; low-dose ion implantation; oxide precipitates; production throughput; ramping rate; surface morphology; trapezoidal hillocks; Annealing; Production; Surface morphology;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552541
