Title :
A performance comparison between new reduced surface drain “RSD” LDMOS and RESURF and conventional planar power devices rated at 20 V
Author :
Efland, Taylor ; Tsai, Chin-Yu ; Erdeljac, John ; Mitros, Jozef ; Hutter, Lou
Author_Institution :
Texas Instrum. Inc., USA
Abstract :
This work presents a new reduced-surface-drain (RSD) type of LDMOS in comparison with very thin RESURF (VTR) and conventional (CONV) devices for 20 V BiCMOS market applications. Competitive performance results obtained for the RSD, VTR and CONV devices are respectively R sp=0.39 mΩ·cm2 BV=24.4 V; Rsp =0.30 mnΩ·cm2, BV=25 V; Rsp=0.59 mΩ·cm2, BV=18-20 V. All R sp, measurements are with 3 MV/cm gate stress(Vgs=12.75 V, Tox=425 Å)
Keywords :
BiCMOS integrated circuits; power MOSFET; power integrated circuits; 20 V; BiCMOS applications; LDMOS; RESURF; performance comparison; planar power devices; reduced surface drain; Application software; BiCMOS integrated circuits; Computer peripherals; Decision making; Electric breakdown; Instruments; Robustness; Stress measurement; Video recording; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601466
