• DocumentCode
    3239093
  • Title

    A performance comparison between new reduced surface drain “RSD” LDMOS and RESURF and conventional planar power devices rated at 20 V

  • Author

    Efland, Taylor ; Tsai, Chin-Yu ; Erdeljac, John ; Mitros, Jozef ; Hutter, Lou

  • Author_Institution
    Texas Instrum. Inc., USA
  • fYear
    1997
  • fDate
    26-29 May 1997
  • Firstpage
    185
  • Lastpage
    188
  • Abstract
    This work presents a new reduced-surface-drain (RSD) type of LDMOS in comparison with very thin RESURF (VTR) and conventional (CONV) devices for 20 V BiCMOS market applications. Competitive performance results obtained for the RSD, VTR and CONV devices are respectively R sp=0.39 mΩ·cm2 BV=24.4 V; Rsp =0.30 mnΩ·cm2, BV=25 V; Rsp=0.59 mΩ·cm2, BV=18-20 V. All R sp, measurements are with 3 MV/cm gate stress(Vgs=12.75 V, Tox=425 Å)
  • Keywords
    BiCMOS integrated circuits; power MOSFET; power integrated circuits; 20 V; BiCMOS applications; LDMOS; RESURF; performance comparison; planar power devices; reduced surface drain; Application software; BiCMOS integrated circuits; Computer peripherals; Decision making; Electric breakdown; Instruments; Robustness; Stress measurement; Video recording; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
  • Conference_Location
    Weimar
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-3993-2
  • Type

    conf

  • DOI
    10.1109/ISPSD.1997.601466
  • Filename
    601466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3239093