• DocumentCode
    3239100
  • Title

    Growth and retrogrowth of oxidation induced stacking faults (OISF) in SIMOX

  • Author

    Giles, L.F. ; Kunii, Y. ; Izumi, K.

  • Author_Institution
    NTT LSI Labs., Atsugi, Japan
  • fYear
    1996
  • fDate
    30 Sep-3 Oct 1996
  • Firstpage
    158
  • Lastpage
    159
  • Abstract
    We demonstrate that it is possible to produce OISF free thin SOI structures using conventional dry oxidation at T⩾1200°C. Fully annealed SIMOX wafers produced by a commercial NV-200 implanter are used in this work. The thermal oxidation experiments are carried out at 900-1350°C in dry O2. Plan view transmission electron microscopy (PVTEM) and chemical defect etching are used to determine the OISF density both before and after the thermal oxidation experiments
  • Keywords
    SIMOX; annealing; etching; ion implantation; oxidation; stacking faults; transmission electron microscopy; 900 to 1350 C; NV-200 implanter; O2; OISF density; Si; chemical defect etching; dry O2; dry oxidation; fully annealed SIMOX wafers; oxidation induced stacking faults; plan view transmission electron microscopy; thermal oxidation; thin SOI structures; Chemistry; Materials science and technology; Oxidation; Physics; Stacking; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1996. Proceedings., 1996 IEEE International
  • Conference_Location
    Sanibel Island, FL
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-3315-2
  • Type

    conf

  • DOI
    10.1109/SOI.1996.552542
  • Filename
    552542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3239100