Title :
Growth and retrogrowth of oxidation induced stacking faults (OISF) in SIMOX
Author :
Giles, L.F. ; Kunii, Y. ; Izumi, K.
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
30 Sep-3 Oct 1996
Abstract :
We demonstrate that it is possible to produce OISF free thin SOI structures using conventional dry oxidation at T⩾1200°C. Fully annealed SIMOX wafers produced by a commercial NV-200 implanter are used in this work. The thermal oxidation experiments are carried out at 900-1350°C in dry O2. Plan view transmission electron microscopy (PVTEM) and chemical defect etching are used to determine the OISF density both before and after the thermal oxidation experiments
Keywords :
SIMOX; annealing; etching; ion implantation; oxidation; stacking faults; transmission electron microscopy; 900 to 1350 C; NV-200 implanter; O2; OISF density; Si; chemical defect etching; dry O2; dry oxidation; fully annealed SIMOX wafers; oxidation induced stacking faults; plan view transmission electron microscopy; thermal oxidation; thin SOI structures; Chemistry; Materials science and technology; Oxidation; Physics; Stacking; Temperature dependence;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552542
