Title :
Gate oxide integrity on ITOX-SIMOX wafers
Author :
Kawamura, K. ; Deai, H. ; Morikawa, Y. ; Sakamoto, H. ; Yano, T. ; Hamaguchi, I. ; Takayama, S. ; Nagatake, Y. ; Matsumura, A. ; Tachimori, M. ; Nakashima, S.
Author_Institution :
Adv. Technol. Res. Labs., Nippon Steel Corp., Hikari, Japan
fDate :
30 Sep-3 Oct 1996
Abstract :
The Gate-Oxide-Integrity (GOI) on Thin-Film-Silicon-On-Insulator (TFSOI) wafers is required to be the same as that on bulk silicon wafers in a commercial stage of LSIs using SOI CMOS technology. However, the GOI on TFSOI wafers, especially charge-to-breakdown characteristics, has been reported to be inferior to that on bulk wafers. In this paper, the GOI on ITOX (Internal-Thermal-OXide)-SIMOX wafers fabricated by the low-dose implanting and High-Temperature-Oxidation (HTO) technique is investigated, revealing that ITOX-SIMOX wafers have GOI comparable to that on bulk wafers. The influence of device structures, particularly of total gate edge length, on the GOI is also discussed
Keywords :
SIMOX; ITOX-SIMOX wafer; TFSOI; charge-to-breakdown characteristics; gate oxide integrity; high-temperature-oxidation; internal thermal oxide; low-dose implantation; Area measurement; Charge measurement; Current measurement; Degradation; Design for quality; Dielectric breakdown; Electric breakdown; Length measurement; MOS capacitors; Q measurement;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552544
