Gate oxide integrity on ITOX-SIMOX wafers

Author

Kawamura, K. ; Deai, H. ; Morikawa, Y. ; Sakamoto, H. ; Yano, T. ; Hamaguchi, I. ; Takayama, S. ; Nagatake, Y. ; Matsumura, A. ; Tachimori, M. ; Nakashima, S.

Author_Institution

Adv. Technol. Res. Labs., Nippon Steel Corp., Hikari, Japan

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

162

Lastpage

163

Abstract

The Gate-Oxide-Integrity (GOI) on Thin-Film-Silicon-On-Insulator (TFSOI) wafers is required to be the same as that on bulk silicon wafers in a commercial stage of LSIs using SOI CMOS technology. However, the GOI on TFSOI wafers, especially charge-to-breakdown characteristics, has been reported to be inferior to that on bulk wafers. In this paper, the GOI on ITOX (Internal-Thermal-OXide)-SIMOX wafers fabricated by the low-dose implanting and High-Temperature-Oxidation (HTO) technique is investigated, revealing that ITOX-SIMOX wafers have GOI comparable to that on bulk wafers. The influence of device structures, particularly of total gate edge length, on the GOI is also discussed

Keywords

SIMOX; ITOX-SIMOX wafer; TFSOI; charge-to-breakdown characteristics; gate oxide integrity; high-temperature-oxidation; internal thermal oxide; low-dose implantation; Area measurement; Charge measurement; Current measurement; Degradation; Design for quality; Dielectric breakdown; Electric breakdown; Length measurement; MOS capacitors; Q measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552544

Filename

552544