Electron spin resonance characterization of Unibond(R) material

Although recent studies of the electrical properties of Unibond(R) films have reported promising electrical characteristics, the physical nature of the defect structures responsible for the charge trapping properties of these films have not yet been studied via electron spin resonance (ESR). ESR provides structural information and allows testing of minimally processed structures making it an ideal tool for studying charge trapping in SiO₂ films. When combined with electrical measurements such as capacitance vs. voltage (CV), ESR studies can provide detailed information about the atomic scale defect structures that dominate the electronic properties of thin insulating films. An atomic scale understanding of the electronic properties can be an important guide for future development. In this abstract, we compare the ESR and CV response of Unibond(R) wafers to hole injection and VUV irradiation