GaAs MMIC based components and frontends for millimeterwave communication and sensor systems

Author

Daembkes, H. ; Adelseck, B. ; Schmidt, L.P. ; Schroth, J.

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

fYear

1995

fDate

17-19 May 1995

Firstpage

83

Lastpage

86

Abstract

In the millimeter wave region several communication and sensor systems are emerging which presently are served only by III/V based technologies. First sensor systems of relevant volume market are tested at 76 GHz for automotive sensors, with other systems operating at 60 GHz and 94 GHz. For mm-wave communication systems volume applications arise at 38 GHz for the interconnection of PCN cells. This paper describes GaAs based technologies and components which are available to serve the requirements of mm-wave communication sensor systems up to 80 GHz

Keywords

III-V semiconductors; JFET integrated circuits; MESFET integrated circuits; automotive electronics; cellular radio; field effect MMIC; gallium arsenide; intelligent control; land mobile radio; millimetre wave detectors; personal communication networks; radio links; road traffic; traffic control; 38 GHz; 60 MHz; 76 GHz; 80 GHz; 94 GHz; GaAs; GaAs MMIC based components; PCN cells; automotive sensors; frontends; intelligent cruise control; millimeterwave communication; sensor systems; Costs; Gallium arsenide; Intelligent sensors; MESFETs; MMICs; Millimeter wave technology; Mixers; Packaging; Schottky diodes; Sensor systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Systems Conference, 1995. Conference Proceedings., IEEE NTC '95

Conference_Location

Orlando, FL

Print_ISBN

0-7803-2591-1

Type

conf

DOI

10.1109/NTCMWS.1995.522866

Filename

522866