DocumentCode :
3239282
Title :
A fast-switching intelligent power MOSFET with thermal protection and negative gate protection
Author :
Sakamoto, Kozo ; Fuchigami, Nobutaka ; Tsunoda, Hideki ; Yanokura, Eiji
Author_Institution :
Semicond. & Intergrated Circuits Div., Hitachi Ltd., Tokyo, Japan
fYear :
1997
fDate :
26-29 May 1997
Firstpage :
189
Lastpage :
192
Abstract :
Recently, thermal protection circuits have been added to power MOSFETs to improve their reliability. However, integrating a protection circuit into a power MOSFET causes parasitic bipolar transistors to form. These parasitic bipolar transistors cause a leakage that passes from the drain terminal to the gate terminal when a negative gate voltage is applied against a source voltage. Therefore, these MOSFETs cannot be used in a high-side switch circuit without some form of negative gate protection. To solve this problem, we proposed an intelligent power MOSFET with built-in thermal protection and negative gate protection, which we called the thermal FET. However, the switching speed of this MOSFET is fairly slow because it includes a gate resistor of about 5 to 10 kΩ in its thermal shutdown circuit. Here, we describe a fast-switching intelligent power MOSFET whose switching speed is about two orders of magnitude faster than our previous thermal FET. This was achieved by replacing the gate resistor with a MOSFET. We also developed a new form of negative gate protection for the additional MOSFET. We call this highly reliable fast-switching intelligent power MOSFET an FS-Thermal FET. The FS-Thermal FET can be used in the upper arms of H-bridge circuits and high-side switch circuits, as well as in low-side switch circuits, with this new form of negative gate protection
Keywords :
MOS integrated circuits; bridge circuits; field effect transistor switches; integrated circuit reliability; power MOSFET; power field effect transistors; power integrated circuits; power semiconductor switches; protection; semiconductor device reliability; FS-thermal FET; H-bridge circuits; built-in protection; fast-switching power MOSFET; high-side switch circuit; intelligent power MOSFET; low-side switch circuits; negative gate protection; parasitic bipolar transistors; thermal protection; thermal shutdown circuit; Bipolar transistors; FETs; Integrated circuit reliability; MOSFET circuits; Power MOSFET; Protection; Resistors; Switches; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
ISSN :
1063-6854
Print_ISBN :
0-7803-3993-2
Type :
conf
DOI :
10.1109/ISPSD.1997.601467
Filename :
601467
Link To Document :
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