Response surface characterization of the deposition of LPCVD SiGe for solid-phase crystallized poly-TFTs

Author

Subramanian, Vivek ; Saraswat, Krishna C. ; Hovagimian, Howard ; Mehlhaff, John

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

fYear

1997

fDate

35589

Firstpage

94

Lastpage

97

Abstract

A multifactorial design of experiments has been used to realize a response surface characterization of the deposition of SiGe for poly-TFTs. Devices have been fabricated demonstrated the best performance achieved to date using a comparable SiGe technology. Optimization strategies have been developed to further improve performance. These should enable the fabrication of high-performance SiGe TFTs for a large-area AMLCD technology

Keywords

CVD coatings; Ge-Si alloys; crystallisation; design of experiments; semiconductor growth; semiconductor materials; semiconductor thin films; thin film transistors; LPCVD deposition; SiGe; fabrication; large-area AMLCD technology; optimization; poly-TFT; response surface; solid-phase crystallization; statistical multifactorial design of experiments; Active matrix liquid crystal displays; Crystallization; Germanium silicon alloys; Glass; Liquid crystal displays; Response surface methodology; Silicon germanium; Temperature; Thin film transistors; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Metrology, 1997 2nd International Workshop on

Conference_Location

Kyoto

Print_ISBN

0-7803-3737-9

Type

conf

DOI

10.1109/IWSTM.1997.629422

Filename

629422