Title :
Nonlinear table-based static HBT model including thermal effects
Author :
Nunez-Fernandez, B. ; Barciela, M. Fernandez ; Manin, G. Fernandez ; Mojon, O. ; Sanchez, E. ; Tasker, P.J.
Author_Institution :
Depart. de Teoria de la Senal y Comunicaciones, Univ. de Vigo
Abstract :
A nonlinear table-based thermal model of the static HBT behavior is presented for the first time and validated under DC operation. The generated model uses table-based nonlinear functions Ic and V be in the output and input ports, respectively, and both are defined vs. Ib and Vce by using a non-uniform bias grid. Thermal modeling (self-biasing and environment temperature dependence) is done by means of two analytical functions (one for each device port) involving table-based nonlinear coefficients. Five tables are the minimum required to accurately predict the device dc behavior vs. temperature. Model extraction is direct and does not require optimization. Excellent results have been obtained for different InGaAs/GaAs HBTs in the range 10 to 100 degC
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; nonlinear functions; 10 to 100 C; InGaAs-GaAs; environment temperature dependence; heterojunction bipolar transistor; nonlinear functions; nonlinear table-based static HBT model; self-biasing; thermal effects; thermal modeling; Equations; FETs; Heterojunction bipolar transistors; III-V semiconductor materials; Integrated circuit modeling; MMICs; Predictive models; Temperature dependence; Temperature distribution; Thermal conductivity; Heterojunction Bipolar Transistor; modeling;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on
Conference_Location :
Aveiro
Print_ISBN :
0-7803-9722-3
Electronic_ISBN :
0-7803-9723-1
DOI :
10.1109/INMMIC.2006.283494
