Title :
Modeling of Multi-Finger SiGe HBTs and the Error Metrics of the Large Signal Model Performances
Author :
Angelov, Iltcho ; Samelis, Apostolos ; Fernandez-Barciela, Monica ; Mojon, Tino
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg
Abstract :
A compact large-signal model for multi-finger SiGe HBTs is proposed and experimentally validated. The model formulation leads to a simple parameter extraction procedure. Model development was carried out for a multi-finger SiGe HBT fabricated in a commercial process technology. It consisted of 72 fingers each with a drawn emitter geometry of 2times20times0.5 mum2. Results show good fit between measured and simulated DC, S-parameter and LS characteristics
Keywords :
Ge-Si alloys; S-parameters; heterojunction bipolar transistors; semiconductor device models; HBT; S-parameters; SiGe; heterojunction bipolar transistors; large-signal model; parameter extraction; Data mining; Equivalent circuits; Fingers; Frequency dependence; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Silicon germanium; Solid modeling; Thermal resistance;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on
Conference_Location :
Aveiro
Print_ISBN :
0-7803-9722-3
Electronic_ISBN :
0-7803-9723-1
DOI :
10.1109/INMMIC.2006.283512
