DocumentCode
3240301
Title
Over-temperature noise modeling of PHEMTs
Author
Boudiaf, Ali ; Dubon-Chevallier, Chantal
Author_Institution
Univ. de Marne-la-Vallee, Noisy le Grand, France
fYear
1995
fDate
17-19 May 1995
Firstpage
247
Lastpage
250
Abstract
A new procedure is presented for modeling the variations with temperature of the noise source coefficients related to the gate and the drain of a field effect transistor (FET). The experimental results obtained for a temperature range over -60°C to 140°C are compared to two recent similar studies, using a pseudomorphic HEMT. It is demonstrated that good agreement can be obtained for some of the temperature coefficients for both the small signal model and the internal noise sources
Keywords
equivalent circuits; high electron mobility transistors; semiconductor device models; semiconductor device noise; semiconductor device testing; temperature; FET; PHEMT; experimental results; field effect transistor; gate; internal noise sources; noise source coefficients; over-temperature noise modeling; pseudomorphic HEMT; small signal model; temperature range; Circuit noise; Equivalent circuits; Noise figure; Noise measurement; PHEMTs; Performance evaluation; Scattering parameters; Temperature distribution; Temperature sensors; Working environment noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Systems Conference, 1995. Conference Proceedings., IEEE NTC '95
Conference_Location
Orlando, FL
Print_ISBN
0-7803-2591-1
Type
conf
DOI
10.1109/NTCMWS.1995.522897
Filename
522897
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