Title :
Over-temperature noise modeling of PHEMTs
Author :
Boudiaf, Ali ; Dubon-Chevallier, Chantal
Author_Institution :
Univ. de Marne-la-Vallee, Noisy le Grand, France
Abstract :
A new procedure is presented for modeling the variations with temperature of the noise source coefficients related to the gate and the drain of a field effect transistor (FET). The experimental results obtained for a temperature range over -60°C to 140°C are compared to two recent similar studies, using a pseudomorphic HEMT. It is demonstrated that good agreement can be obtained for some of the temperature coefficients for both the small signal model and the internal noise sources
Keywords :
equivalent circuits; high electron mobility transistors; semiconductor device models; semiconductor device noise; semiconductor device testing; temperature; FET; PHEMT; experimental results; field effect transistor; gate; internal noise sources; noise source coefficients; over-temperature noise modeling; pseudomorphic HEMT; small signal model; temperature range; Circuit noise; Equivalent circuits; Noise figure; Noise measurement; PHEMTs; Performance evaluation; Scattering parameters; Temperature distribution; Temperature sensors; Working environment noise;
Conference_Titel :
Microwave Systems Conference, 1995. Conference Proceedings., IEEE NTC '95
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-2591-1
DOI :
10.1109/NTCMWS.1995.522897
