Improvement of the diode characteristics using emitter-controlled principles (EMCON-diode)

Author

Porst, A. ; Auerbach, F. ; Brunner, H. ; Deboy, G. ; Hille, F.

Author_Institution

Siemens AG, Munich, Germany

fYear

1997

fDate

26-29 May 1997

Firstpage

213

Lastpage

216

Abstract

In this paper it is shown experimentally how the shape and the amount of the carrier distribution in the middle region of a diode influences the static behavior (voltage-current characteristic), the dynamic behavior (reverse recovery current, reverse recovery charge, soft recovery) and the temperature dependence of these characteristics. By combining the lifetime dominated Hall-principle and the emitter-controlling Kleinmann-principle various diodes were manufactured and investigated. With an infrared absorption technique the corresponding carrier distributions were measured

Keywords

carrier density; carrier lifetime; power semiconductor diodes; EMCON diode; Hall principle; Kleinmann principle; carrier distribution; dynamic characteristics; emitter-controlled principles; infrared absorption; lifetime; reverse recovery charge; reverse recovery current; soft recovery; static characteristics; temperature dependence; voltage-current characteristics; Circuits; Current measurement; Doping; Electromagnetic wave absorption; Insulated gate bipolar transistors; Schottky diodes; Shape control; Spontaneous emission; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601475

Filename

601475