Progress in development of the 3.5 kV high voltage IGBT/diode chipset and 1200 A module applications

Author

Brunner, Helfried ; Hierholzer, Martin ; Laska, Thomas ; Porst, Alfred

Author_Institution

Semicond. Div., Siemens AG, Munich, Germany

fYear

1997

fDate

26-29 May 1997

Firstpage

225

Lastpage

228

Abstract

A 3.5 kV IGBT/diode chipset is presented with a large safe operating area for 1200 A module applications. The IGBT cell design is optimized with respect to a low saturation voltage and a low short circuit current and the carrier modulation of the diode bases on emitter controlled principles. The turn on, turn off and short circuit ruggedness is experimentally proofed for 2.5 kV circuit voltage and 125°C temperature. The turn off behavior is performed for the twofold nominal current of 2.4 kA and the short circuit ruggedness is verified for a period over 20 μs. The turn on and turnoff energies show a linear dependence with the collector current

Keywords

insulated gate bipolar transistors; power semiconductor switches; power transistors; semiconductor device models; 1200 A; 125 degC; 20 mus; 3.5 kV; IGBT cell design; carrier modulation; circuit voltage; collector current; emitter controlled principles; high voltage IGBT/diode chipset; linear dependence; module applications; safe operating area; saturation voltage; short circuit current; short circuit ruggedness; turn off; turn on; twofold nominal current; Chip scale packaging; Circuits; Electric variables; Insulated gate bipolar transistors; Medical simulation; Radiative recombination; Semiconductor diodes; Switches; Temperature; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601478

Filename

601478