DocumentCode
324165
Title
Buried channel MOSFET DC SPICE modeling using surface channel models
Author
Kulas, M. ; Nathan, A. ; Weale, G.
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume
1
fYear
1998
fDate
24-28 May 1998
Firstpage
445
Abstract
In this paper, we review the various methods available for modeling DC behaviour of buried channel metal oxide semiconductor transistors in SPICE. A surface channel model is used to predict the buried channel device DC behaviour, and an equivalent circuit using the fitted surface channel model is presented
Keywords
MOSFET; SPICE; equivalent circuits; semiconductor device models; DC behaviour; SPICE modeling; buried channel MOSFET; equivalent circuit; surface channel models; Doping; Equivalent circuits; FETs; Implants; MOSFET circuits; Predictive models; SPICE; Substrates; Threshold voltage; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
Conference_Location
Waterloo, Ont.
ISSN
0840-7789
Print_ISBN
0-7803-4314-X
Type
conf
DOI
10.1109/CCECE.1998.682780
Filename
682780
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