Accurate prediction of deep submicron CMOS device characteristics using inverse modeling techniques

Author

Pandey, Shesh Mani ; Wensheng, Qian ; Sarkar, Manju ; Benistant, Francis ; Boyland, Frank ; Redford, Mark

Author_Institution

Chartered Semicond. Manuf. Ltd., Singapore

fYear

2001

fDate

2001

Firstpage

29

Lastpage

32

Abstract

This work presents a very simple and predictive technology CAD (TCAD) calibration methodology, which employs inverse modeling to support and enhance process technology development. In this paper we describe the way in which TCAD tools are calibrated using physical, current-voltage (I-V) and capacitance-voltage (CV) measurements only. The methodology is applied to sub-nominal dimensions to illustrate its ability to predict device characteristics. The predictability of the calibrated deck is then demonstrated in the analysis of sub nominal device dimensions

Keywords

CMOS integrated circuits; VLSI; integrated circuit measurement; integrated circuit modelling; technology CAD (electronics); CMOS device characteristics; calibration methodology; capacitance-voltage measurements; current-voltage measurements; deep submicron CMOS; device characteristics; inverse modeling techniques; physical measurements; process technology development; sub nominal device dimensions; sub-nominal dimensions; technology CAD; CMOS technology; Calibration; Capacitance; Capacitance-voltage characteristics; Data mining; Doping profiles; Implants; Inverse problems; Medical simulation; US Department of Energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Methodology, IEEE International Workshop on, 2001 6yh.

Conference_Location

Kyoto

Print_ISBN

0-7803-6688-3

Type

conf

DOI

10.1109/IWSTM.2001.933820

Filename

933820