DocumentCode :
3241808
Title :
Study of an oxygen vacancy in MgO clusters
Author :
Malliavin, M.-J. ; Coudray, C. ; Blaise, G.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fYear :
1995
fDate :
10-13 Jul 1995
Firstpage :
159
Lastpage :
163
Abstract :
The authors consider the properties of O vacancies in MgO. The preliminary study shows that when additional electrons are introduced in a cluster of MgO containing an oxygen vacancy, the first two electrons partly localize in this vacancy. When more electrons are added, the implanted charge seems to be destabilized and a fraction of it seems to be moved to the surface of the cluster
Keywords :
bond lengths; cluster approximation; defect states; electron beam effects; magnesium compounds; surface charging; vacancies (crystal); MgO; MgO clusters; O vacancies; cluster surface; electron beam charging; implanted charge; oxygen vacancy; partial localization; structure; surface charging; Bonding; Convergence of numerical methods; Electrons; Geometry; Joining IEEE; Lattices; Magnesium; Oxygen;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on
Conference_Location :
Leicester
Print_ISBN :
0-7803-2040-9
Type :
conf
DOI :
10.1109/ICSD.1995.522969
Filename :
522969
Link To Document :
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