DocumentCode
3241931
Title
Comparison of defected ground structure (DGS) and defected microstrip structure (DGS) behavior at high frequencies
Author
Tirado-Mendez, J.A. ; Jardon-Aguilar, H.
Author_Institution
CINVESTAV-IPN, Telecommunications Section, Av. IPN 2508, Sn. Pedro Zacatenco, Mexico, D.F., Mexico, 07360, Office 127
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
7
Lastpage
10
Abstract
A novel Defected Microstrip Structure is proposed, which behaves in a similar way than a conventional unit cell Defected Ground Structure (DGS) concerning band-stop response and selectivity. As a difference from the DGS, the DMS structure frequency response is almost the same when the microstrip length varies. To show this fact, a λ2 and a λ4 50 Ohms microstrips were used for different DGS and DMS cell sizes.
Keywords
Etching; Frequency response; Microstrip filters; Microwave amplifiers; Microwave circuits; Microwave filters; Power harmonic filters; Radio frequency; Radiofrequency amplifiers; Tin; Amplifier Linearization; Antennas; DGS; Microstrip Filters;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on
Conference_Location
Acapulco, Mexico
Print_ISBN
0-7803-8531-4
Type
conf
DOI
10.1109/ICEEE.2004.1433839
Filename
1433839
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