Title :
Study of the influence of process parameters on gate oxide degradation during contact etching in MERIE and HDP reactors
Author :
Poiroux, T. ; Pascal, F. ; Heitzmann, M. ; Berruyer, P. ; Turban, G. ; Reimbold, G.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
Two designs of experiments (DOE) have been carried out, in a magnetically enhanced reactive ion etching (MERIE) reactor and in a high-density plasma (HDP) reactor, to determine the influence of pressure, bias power and overetch on gate oxide degradation. In both cases, we find that damage can be strongly reduced by increasing pressure. For the MERIE reactor, the model used for the DOE is suitable and gives the following tendencies: the damage level decreases for higher pressure and lower bias power, whereas the overetch seems to influence the results quite slightly. For the HDP reactor, the results show a strong pressure influence, with the same tendency as previously: the lower the pressure, the higher the damage level. In the analysis of the results, we pay special attention to the applicability of the DOE and propose explanations for the observed tendencies
Keywords :
design of experiments; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; plasma density; plasma materials processing; plasma pressure; semiconductor process modelling; sputter etching; DOE model; HDP reactors; MERIE reactor; MERIE reactors; SiO2-Si; contact etching; damage level; design of experiments; gate oxide degradation; high-density plasma reactor; magnetically enhanced reactive ion etching; overetch; plasma bias power; plasma pressure; process parameters; Cleaning; Degradation; Dielectrics; Electrons; Etching; Inductors; Plasma applications; Plasma chemistry; Plasma density; US Department of Energy;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798797
