• DocumentCode
    3242222
  • Title

    Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies

  • Author

    Gielen, G. ; De Wit, P. ; Maricau, E. ; Loeckx, J. ; Martin-Martinez, J. ; Kaczer, B. ; Groeseneken, G. ; Rodríguez, R. ; Nafría, M.

  • Author_Institution
    Dept. Elektrotechniek ESAT-MICAS, Katholieke Univ. Leuven, Leuven
  • fYear
    2008
  • fDate
    10-14 March 2008
  • Firstpage
    1322
  • Lastpage
    1327
  • Abstract
    With further scaling of nanometer CMOS technologies, yield and reliability become an increasing challenge. This paper reviews the most important phenomena affecting yield and reliability. For each effect, the basic physical mechanisms causing the effect and its impact on transistor parameters are described. Possible solutions to cope/handle with these effects on the design level are discussed as well.
  • Keywords
    CMOS integrated circuits; integrated circuit reliability; integrated circuit yield; nanotechnology; integrated circuit reliability; integrated circuit yield; nanometer CMOS technologies; physical mechanisms; transistor parameters; CMOS technology; Degradation; Digital circuits; Fabrication; Integrated circuit reliability; Intrusion detection; MOS devices; Semiconductor device modeling; Stress; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation and Test in Europe, 2008. DATE '08
  • Conference_Location
    Munich
  • Print_ISBN
    978-3-9810801-3-1
  • Electronic_ISBN
    978-3-9810801-4-8
  • Type

    conf

  • DOI
    10.1109/DATE.2008.4484862
  • Filename
    4484862
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3242222