Title :
Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damage
Author :
Cha, C.L. ; Chor, E.F. ; Gong, H. ; Zhang, A.Q. ; Dong, Z. ; Chan, L.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Investigative studies to improve the resistance to plasma process-induced damage and data-retention time of ONO in flash memory devices via a rapid thermal nitridation (RTN) process in N2O ambient have been carried out. Experimental results revealed that an extra RTN step (1050°C, 30 s) after nitride deposition during ONO growth indeed leads to a better quality stacked dielectric layer over the conventional process. Brief explanations of the beneficial effects of RTN are provided in this paper
Keywords :
dielectric thin films; flash memories; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; integrated memory circuits; nitridation; plasma materials processing; 1050 C; 30 s; N2O; N2O ambient; ONO growth; RTN step; SiO2-Si3N4-SiO2; data-retention time; flash memory devices; nitride deposition; plasma process-induced damage; plasma process-induced damage resistance; rapid thermal nitridation; rapid thermal nitrided ONO interpoly dielectric; stacked dielectric layer quality; Dielectric devices; Electric resistance; Materials science and technology; Nonvolatile memory; Plasma applications; Plasma devices; Plasma materials processing; Rapid thermal processing; Research and development; Thermal resistance;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798806
